auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 184.4 EUR |
| 12+ | 172.92 EUR |
| 30+ | 169.45 EUR |
| 54+ | 166.67 EUR |
| 102+ | 160.39 EUR |
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Technische Details MKI50-12F7 IXYS
Description: IGBT MODULE 1200V 65A 350W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: E2, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 700 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote MKI50-12F7 nach Preis ab 181.24 EUR bis 181.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| MKI50-12F7 | Hersteller : IXYS |
 Description: IGBT MODULE 1200V 65A 350W E2Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A NTC Thermistor: No Supplier Device Package: E2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 700 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MKI50-12F7 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W Power dissipation: 350W Technology: HiPerFRED™; NPT Mechanical mounting: screw Pulsed collector current: 100A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 45A Topology: H-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MKI50-12F7 | Hersteller : Littelfuse |
Trans IGBT Module N-CH 1200V 65A 350000mW 12-Pin |
Produkt ist nicht verfügbar |
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| MKI50-12F7 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W Power dissipation: 350W Technology: HiPerFRED™; NPT Mechanical mounting: screw Pulsed collector current: 100A Application: motors Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 45A Topology: H-bridge |
Produkt ist nicht verfügbar |