| Anzahl | Preis |
|---|---|
| 1+ | 184.4 EUR |
| 12+ | 172.92 EUR |
| 30+ | 169.45 EUR |
| 54+ | 166.67 EUR |
| 102+ | 160.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MKI50-12F7 IXYS
Description: IGBT MODULE 1200V 65A 350W E2, Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: E2, Packaging: Box, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V, Current - Collector Cutoff (Max): 700 µA, Power - Max: 350 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 65 A, Part Status: Active, IGBT Type: NPT, Supplier Device Package: E2, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C (TJ).
Weitere Produktangebote MKI50-12F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MKI50-12F7 | MOD IGBT H-BRIDGE 1200V 65A E2 Силові IGBT-модулі |
Produkt ist nicht verfügbar |
|||
| MKI50-12F7 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 65A 350W E2 Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: E2 Packaging: Box Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Current - Collector Cutoff (Max): 700 µA Power - Max: 350 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 65 A Part Status: Active IGBT Type: NPT Supplier Device Package: E2 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A Operating Temperature: -40°C ~ 125°C (TJ) |
Produkt ist nicht verfügbar |