MMBD914LT3HTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 100V 250MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details MMBD914LT3HTMA1 Infineon Technologies
Description: DIODE GEN PURP 100V 250MA SOT23, Current - Reverse Leakage @ Vr: 100 nA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PG-SOT23, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).