MMBT2907ALT1XT Infineon Technologies
auf Bestellung 73399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.23 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.09 EUR |
| 9000+ | 0.069 EUR |
| 24000+ | 0.065 EUR |
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Technische Details MMBT2907ALT1XT Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: PG-SOT23, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 330 mW.
Weitere Produktangebote MMBT2907ALT1XT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMBT2907ALT1XT | Hersteller : Infineon Technologies |
 Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 330 mW |
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