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MMBT5551Q-7

MMBT5551Q-7 Diodes Zetex


mmbt5551q.pdf
Hersteller: Diodes Zetex
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Technische Details MMBT5551Q-7 Diodes Zetex

Description: TRANS NPN 160V 0.6A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 300 mW, Qualification: AEC-Q101.

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MMBT5551Q-7 MMBT5551Q-7 Hersteller : Diodes Incorporated MMBT5551Q.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MMBT5551Q-7 MMBT5551Q-7 Hersteller : Diodes Incorporated MMBT5551Q.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MMBT5551Q-7 MMBT5551Q-7 Hersteller : Diodes Incorporated MMBT5551.pdf Bipolar Transistors - BJT SS Hi Voltage Transistor SOT23 T&R 3K
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MMBT5551Q-7 Hersteller : DIODES INCORPORATED MMBT5551Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 30...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Quantity in set/package: 3000pcs.
Frequency: 100...300MHz
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