MMBT5551W_R1_00701 Panjit International Inc.
Hersteller: Panjit International Inc.Description: TRANS NPN 160V 0.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
| 6000+ | 0.045 EUR |
| 9000+ | 0.042 EUR |
| 15000+ | 0.039 EUR |
| 21000+ | 0.037 EUR |
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Technische Details MMBT5551W_R1_00701 Panjit International Inc.
Description: TRANS NPN 160V 0.6A SOT-323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 200 mW.
Weitere Produktangebote MMBT5551W_R1_00701 nach Preis ab 0.04 EUR bis 0.27 EUR
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MMBT5551W_R1_00701 | Hersteller : Panjit International Inc. |
Description: TRANS NPN 160V 0.6A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 200 mW |
auf Bestellung 29244 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5551W_R1_00701 | Hersteller : Panjit |
Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR |
auf Bestellung 29673 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBT5551W_R1_00701 | Hersteller : PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MMBT5551W-R1-00701 | Hersteller : Panjit | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
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| MMBT5551W_R1_00701 | Hersteller : PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD |
Produkt ist nicht verfügbar |