MMBT7002K DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Anzahl je Verpackung: 25 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1700+ | 0.043 EUR |
2650+ | 0.027 EUR |
2950+ | 0.024 EUR |
3900+ | 0.018 EUR |
4100+ | 0.017 EUR |
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Produktbewertung abgeben
Technische Details MMBT7002K DIOTEC SEMICONDUCTOR
Description: MOSFET N-CH 60V 300MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote MMBT7002K nach Preis ab 0.017 EUR bis 0.34 EUR
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MMBT7002K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 0.35W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
auf Bestellung 4125 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT7002K | Hersteller : Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.3A, 150C, N |
auf Bestellung 5843 Stücke: Lieferzeit 14-28 Tag (e) |
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MMBT7002K | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 1247 Stücke: Lieferzeit 21-28 Tag (e) |
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MMBT7002K | Hersteller : Diotec Semiconductor | Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT7002K | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
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