MMBT7002KDW DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1.2A; 0.35W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.44nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 358+ | 0.20 EUR |
| 589+ | 0.12 EUR |
| 895+ | 0.08 EUR |
| 1713+ | 0.04 EUR |
| 1812+ | 0.04 EUR |
| 24000+ | 0.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMBT7002KDW DIOTEC SEMICONDUCTOR
Description: MOSFET 2N-CH 60V 0.3A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 295mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.75V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote MMBT7002KDW nach Preis ab 0.04 EUR bis 0.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MMBT7002KDW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1.2A; 0.35W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A Version: ESD |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MMBT7002KDW | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-363, 60V, 0.3A, 150C, N |
auf Bestellung 5452 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
MMBT7002KDW | Hersteller : Diotec Semiconductor |
Description: MOSFET 2N-CH 60V 0.3A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.75V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 2271 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| MMBT7002KDW | Hersteller : Diotec Semiconductor |
SMD MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
|
|
MMBT7002KDW | Hersteller : Diotec Semiconductor |
Description: MOSFET 2N-CH 60V 0.3A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.75V @ 250µA Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |