MMBTRC110SS DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Frequency: 250MHz
Polarisation: bipolar
| Anzahl | Preis |
|---|---|
| 1620+ | 0.044 EUR |
| 2040+ | 0.036 EUR |
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Technische Details MMBTRC110SS DIOTEC SEMICONDUCTOR
Description: BIASED BJT SOT-23 NPN 4700OHM, Resistors Included: R1 Only, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote MMBTRC110SS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMBTRC110SS | Hersteller : Diotec Semiconductor |
Description: BIASED BJT SOT-23 NPN 4700OHMResistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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MMBTRC110SS | Hersteller : Diotec Semiconductor |
Digital Transistors Digital Transistor, SOT-23, 50V, 100mA |
Produkt ist nicht verfügbar |

