MMDF3N02HDR2 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 452+ | 1.08 EUR |
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Technische Details MMDF3N02HDR2 onsemi
Description: MOSFET N-CH 20V 3.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 16 V.
Weitere Produktangebote MMDF3N02HDR2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MMDF3N02HDR2 | ON |
06+ SOIC |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMDF3N02HDR2 |
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Hersteller: ON
06+ SOIC
06+ SOIC
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
