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MMDT3946FL3-7

MMDT3946FL3-7 Diodes Incorporated

MMDT3946FL3.pdf Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 40V X2-DFN1310-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN1310-6 (Type B)
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29
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Technische Details MMDT3946FL3-7 Diodes Incorporated

Description: TRANS NPN/PNP 40V X2-DFN1310-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 300MHz, Supplier Device Package: X2-DFN1310-6 (Type B).

Weitere Produktangebote MMDT3946FL3-7 nach Preis ab 0.22 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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MMDT3946FL3-7 Hersteller : Diodes Incorporated MMDT3946FL3.pdf Bipolar Transistors - BJT General Purpose Transistor
auf Bestellung 2917 Stücke:
Lieferzeit 340-344 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.59 EUR
100+0.33 EUR
500+0.22 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MMDT3946FL3-7 MMDT3946FL3-7 Hersteller : Diodes Incorporated MMDT3946FL3.pdf Description: TRANS NPN/PNP 40V X2-DFN1310-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN1310-6 (Type B)
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Im Einkaufswagen  Stück im Wert von  UAH