MMFTN138K Diotec Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.32 EUR |
| 15+ | 0.24 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.1 EUR |
| 9000+ | 0.067 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
11 Stücke
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Produktbewertung abgeben
Technische Details MMFTN138K Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23, Kind of package: reel; tape, Mounting: SMD, Case: SOT23, Gate charge: 1.3nC, Power dissipation: 0.35W, Drain current: 0.36A, Pulsed drain current: 1.2A, On-state resistance: 6.5Ω, Gate-source voltage: ±20V, Drain-source voltage: 60V, Polarisation: unipolar, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET.
Weitere Produktangebote MMFTN138K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMFTN138K | DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Gate charge: 1.3nC Power dissipation: 0.35W Drain current: 0.36A Pulsed drain current: 1.2A On-state resistance: 6.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET |
auf Bestellung 3064 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMFTN138K |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Gate charge: 1.3nC
Power dissipation: 0.35W
Drain current: 0.36A
Pulsed drain current: 1.2A
On-state resistance: 6.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Gate charge: 1.3nC
Power dissipation: 0.35W
Drain current: 0.36A
Pulsed drain current: 1.2A
On-state resistance: 6.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
auf Bestellung 3064 Stücke:
Lieferzeit 14-21 Tag (e)