MMFTN210A Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET SOT23 N 100V 0.32OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V
auf Bestellung 1785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 95+ | 0.19 EUR |
| 141+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.086 EUR |
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Technische Details MMFTN210A Diotec Semiconductor
Description: MOSFET SOT23 N 100V 0.32OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V.
Weitere Produktangebote MMFTN210A nach Preis ab 0.042 EUR bis 0.064 EUR
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| MMFTN210A | Hersteller : DIOTEC SEMICONDUCTOR |
MMFTN210A-DIO SMD N channel transistors |
auf Bestellung 1460 Stücke: Lieferzeit 7-14 Tag (e) |
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MMFTN210A | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT23 N 100V 0.32OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V |
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