
MMFTN210A DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Pulsed drain current: 7.2A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 770 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
618+ | 0.12 EUR |
770+ | 0.09 EUR |
1068+ | 0.07 EUR |
9000+ | 0.04 EUR |
24000+ | 0.04 EUR |
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Technische Details MMFTN210A DIOTEC SEMICONDUCTOR
Description: MOSFET SOT23 N 100V 0.32OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V.
Weitere Produktangebote MMFTN210A nach Preis ab 0.09 EUR bis 0.26 EUR
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MMFTN210A | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 7.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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MMFTN210A | Hersteller : Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V |
auf Bestellung 1785 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN210A | Hersteller : Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V |
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