MMFTN2316K DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 6.5nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 6.2A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 6.5nC
On-state resistance: 34mΩ
Power dissipation: 1.5W
Drain current: 6.2A
Gate-source voltage: ±12V
Pulsed drain current: 25A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 197+ | 0.36 EUR |
| 336+ | 0.21 EUR |
| 562+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| 3000+ | 0.09 EUR |
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Technische Details MMFTN2316K DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD, Case: SOT23, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 6.5nC, On-state resistance: 34mΩ, Power dissipation: 1.5W, Drain current: 6.2A, Gate-source voltage: ±12V, Pulsed drain current: 25A, Drain-source voltage: 30V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMFTN2316K nach Preis ab 0.09 EUR bis 0.6 EUR
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MMFTN2316K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 6.5nC On-state resistance: 34mΩ Power dissipation: 1.5W Drain current: 6.2A Gate-source voltage: ±12V Pulsed drain current: 25A Drain-source voltage: 30V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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