MMFTN4520 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET, SOT-23, 150V, 0.425A, 15
Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 43+ | 0.41 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTN4520 Diotec Semiconductor
Description: MOSFET, SOT-23, 150V, 0.425A, 15, Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 960mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMFTN4520
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
MMFTN4520 | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-23, 150V, 0.425A, 15 Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 2932 Stücke: Lieferzeit 10-14 Tag (e) |