
MMFTN6001 DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.44A
Power dissipation: 0.53W
Pulsed drain current: 1A
On-state resistance: 2.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: reel; tape
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57933 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
820+ | 0.087 EUR |
1458+ | 0.049 EUR |
2119+ | 0.034 EUR |
3624+ | 0.02 EUR |
3847+ | 0.019 EUR |
15000+ | 0.018 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTN6001 DIOTEC SEMICONDUCTOR
Description: MOSFET SOT23 N 60V 2OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V.
Weitere Produktangebote MMFTN6001 nach Preis ab 0.018 EUR bis 0.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MMFTN6001 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.44A Power dissipation: 0.53W Pulsed drain current: 1A On-state resistance: 2.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: reel; tape Case: SOT23 |
auf Bestellung 57933 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MMFTN6001 | Hersteller : Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
auf Bestellung 1645 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
MMFTN6001 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
MMFTN6001 | Hersteller : Diotec Semiconductor |
![]() |
Produkt ist nicht verfügbar |