MMFTN6001 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.035 EUR |
| 6000+ | 0.029 EUR |
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Technische Details MMFTN6001 Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V.
Weitere Produktangebote MMFTN6001 nach Preis ab 0.018 EUR bis 0.19 EUR
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MMFTN6001 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 0.44A Power dissipation: 0.53W Pulsed drain current: 1A On-state resistance: 2.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42823 Stücke: Lieferzeit 7-14 Tag (e) |
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MMFTN6001 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 0.44A Power dissipation: 0.53W Pulsed drain current: 1A On-state resistance: 2.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
auf Bestellung 42823 Stücke: Lieferzeit 14-21 Tag (e) |
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MMFTN6001 | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
auf Bestellung 6845 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN6001 | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, SOT-23, 60V, 0.44A, 150C, N |
Produkt ist nicht verfügbar |