MMFTP2319 Diotec Semiconductor
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| 3000+ | 0.35 EUR |
| 6000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTP2319 Diotec Semiconductor
Description: MOSFET, SOT-23, P, -40V, -4.2A, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 20 V.
Weitere Produktangebote MMFTP2319
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MMFTP2319 | Hersteller : Diotec Semiconductor |
 SOT-23 TO-236 P-Channel Enhancement Mode FET |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
||
 |
MMFTP2319 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|
 |
MMFTP2319 | Hersteller : Diotec Semiconductor AG |
Description: MOSFET, SOT-23, P, -40V, -4.2A Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 20 V |
Produkt ist nicht verfügbar |
|
|
|
MMFTP2319 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.2A; Idm: -30A; 0.75W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.2A Pulsed drain current: -30A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |