MMFTP330K DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -9.1A; 480mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -9.1A
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.48W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
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Technische Details MMFTP330K DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V.
Weitere Produktangebote MMFTP330K
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MMFTP330K | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
Produkt ist nicht verfügbar |
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| MMFTP330K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -9.1A; 480mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -9.1A Drain-source voltage: -20V Drain current: -3A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 0.48W Polarisation: unipolar |
Produkt ist nicht verfügbar |