MMFTP332 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -1A
On-state resistance: 410mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details MMFTP332 DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V.
Weitere Produktangebote MMFTP332
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MMFTP332 | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V |
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MMFTP332 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1A; Idm: -10A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.5W Polarisation: unipolar Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -1A On-state resistance: 410mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |