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MMIX1F132N50P3
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  • MMIX1F132N50P3

MMIX1F132N50P3 IXYS


littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+48.18 EUR
10+46.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MMIX1F132N50P3 IXYS

Description: MOSFET N-CH 500V 63A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V.

Weitere Produktangebote MMIX1F132N50P3 nach Preis ab 46.33 EUR bis 57.92 EUR

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MMIX1F132N50P3
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MMIX1F132N50P3 Hersteller : IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 520W
Case: SMPD
Mounting: SMD
On-state resistance: 43mΩ
Gate charge: 267nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 330A
Reverse recovery time: 250ns
Drain-source voltage: 500V
Drain current: 63A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.18 EUR
10+46.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F132N50P3 MMIX1F132N50P3 Hersteller : IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+57.92 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F132N50P3 MMIX1F132N50P3 Hersteller : IXYS media-3321312.pdf MOSFETs Polar3 HiPerFET Power MOSFET
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