MMIX1F210N30P3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 51.62 EUR |
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Technische Details MMIX1F210N30P3 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W, Type of transistor: N-MOSFET, Technology: HiPerFET™; Polar3™, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 108A, Pulsed drain current: 550A, Power dissipation: 520W, Case: SMPD, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 268nC, Kind of channel: enhanced, Reverse recovery time: 250ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMIX1F210N30P3 nach Preis ab 51.62 EUR bis 74.35 EUR
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MMIX1F210N30P3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Pulsed drain current: 550A Power dissipation: 520W Case: SMPD Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 268nC Kind of channel: enhanced Reverse recovery time: 250ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1F210N30P3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 108A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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MMIX1F210N30P3 | Hersteller : Littelfuse | Trans MOSFET N-CH 300V 108A 21-Pin SMPD-X |
Produkt ist nicht verfügbar |
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MMIX1F210N30P3 | Hersteller : IXYS | Discrete Semiconductor Modules MSFT SMPD PKG-HIPERFET MSF |
Produkt ist nicht verfügbar |