

MMIX1F210N30P3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 550A
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Technische Details MMIX1F210N30P3 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W, Type of transistor: N-MOSFET, Technology: HiPerFET™; Polar3™, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 108A, Power dissipation: 520W, Case: SMPD, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 268nC, Kind of channel: enhancement, Reverse recovery time: 250ns, Pulsed drain current: 550A.
Weitere Produktangebote MMIX1F210N30P3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMIX1F210N30P3 | IXYS |
Description: MOSFET N-CH 300V 108A 24SMPDPackaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMIX1F210N30P3 | IXYS |
MOSFET Modules SMPD 300V 108A N-CH POLAR3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MMIX1F210N30P3 |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMIX1F210N30P3 |
![]() |
Hersteller: IXYS
MOSFET Modules SMPD 300V 108A N-CH POLAR3
MOSFET Modules SMPD 300V 108A N-CH POLAR3
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH

