MMIX1F210N30P3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 268nC
Reverse recovery time: 250ns
Pulsed drain current: 550A
| Anzahl | Preis |
|---|---|
| 2+ | 57.77 EUR |
| 3+ | 51.02 EUR |
| 10+ | 45.87 EUR |
| 20+ | 45.82 EUR |
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Technische Details MMIX1F210N30P3 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W, Type of transistor: N-MOSFET, Technology: HiPerFET™; Polar3™, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 108A, Power dissipation: 520W, Case: SMPD, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Kind of channel: enhancement, Gate charge: 268nC, Reverse recovery time: 250ns, Pulsed drain current: 550A.
Weitere Produktangebote MMIX1F210N30P3 nach Preis ab 68.2 EUR bis 81.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MMIX1F210N30P3 | Hersteller : IXYS |
MOSFET Modules SMPD 300V 108A N-CH POLAR3 |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMIX1F210N30P3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 108A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
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