MMIX1F210N30P3 IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Case: SMPD
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 268nC
Reverse recovery time: 250ns
On-state resistance: 16mΩ
Drain current: 108A
Gate-source voltage: ±20V
Power dissipation: 520W
Pulsed drain current: 550A
Drain-source voltage: 300V
| Anzahl | Preis |
|---|---|
| 2+ | 57.77 EUR |
| 3+ | 51.02 EUR |
| 10+ | 45.87 EUR |
| 20+ | 45.82 EUR |
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Technische Details MMIX1F210N30P3 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W, Mounting: SMD, Case: SMPD, Kind of channel: enhancement, Technology: HiPerFET™; Polar3™, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 268nC, Reverse recovery time: 250ns, On-state resistance: 16mΩ, Drain current: 108A, Gate-source voltage: ±20V, Power dissipation: 520W, Pulsed drain current: 550A, Drain-source voltage: 300V.
Weitere Produktangebote MMIX1F210N30P3 nach Preis ab 68.2 EUR bis 81.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MMIX1F210N30P3 | Hersteller : IXYS |
MOSFET Modules SMPD 300V 108A N-CH POLAR3 |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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