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MMIX1F210N30P3
  • MMIX1F210N30P3
  • MMIX1F210N30P3

MMIX1F210N30P3 IXYS


media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+57.77 EUR
3+51.02 EUR
10+45.87 EUR
20+45.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MMIX1F210N30P3 IXYS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W, Mounting: SMD, Polarisation: unipolar, Reverse recovery time: 250ns, Gate charge: 268nC, On-state resistance: 16mΩ, Gate-source voltage: ±20V, Drain current: 108A, Drain-source voltage: 300V, Power dissipation: 520W, Pulsed drain current: 550A, Kind of channel: enhancement, Technology: HiPerFET™; Polar3™, Case: SMPD, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote MMIX1F210N30P3 nach Preis ab 45.82 EUR bis 81.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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MMIX1F210N30P3
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MMIX1F210N30P3 Hersteller : IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+57.77 EUR
3+51.02 EUR
10+45.87 EUR
20+45.82 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F210N30P3 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_SMPD_Packages_MMIX1F210N30P3_Datasheet.PDF MOSFET Modules SMPD 300V 108A N-CH POLAR3
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+81.98 EUR
10+68.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F210N30P3 Hersteller : Littelfuse crete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf.pdf Trans MOSFET N-CH 300V 108A 21-Pin SMPD-X
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1F210N30P3 Hersteller : IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Description: MOSFET N-CH 300V 108A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH