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MMIX1F420N10T

MMIX1F420N10T IXYS


Hersteller: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.91 EUR
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Technische Details MMIX1F420N10T IXYS

Description: MOSFET N-CH 100V 334A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 334A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V.

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MMIX1F420N10T MMIX1F420N10T Hersteller : Littelfuse screte_mosfets_smpd_packages_mmix1f420n10t_datasheet.pdf.pdf Trans MOSFET N-CH 100V 334A 21-Pin SMPD-X
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MMIX1F420N10T Hersteller : IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Reverse recovery time: 140ns
Drain-source voltage: 100V
Drain current: 334A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Gate charge: 670nC
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: SMD
Case: SMPD
Anzahl je Verpackung: 1 Stücke
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MMIX1F420N10T MMIX1F420N10T Hersteller : IXYS media-3321979.pdf MOSFET SMPD MOSFETs Power Device
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MMIX1F420N10T Hersteller : IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Reverse recovery time: 140ns
Drain-source voltage: 100V
Drain current: 334A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 680W
Polarisation: unipolar
Gate charge: 670nC
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1kA
Mounting: SMD
Case: SMPD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH