
MMIX1F420N10T IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 76.91 EUR |
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Technische Details MMIX1F420N10T IXYS
Description: MOSFET N-CH 100V 334A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 334A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V, Power Dissipation (Max): 680W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V.
Weitere Produktangebote MMIX1F420N10T
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Verfügbarkeit |
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MMIX1F420N10T | Hersteller : Littelfuse |
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MMIX1F420N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W Reverse recovery time: 140ns Drain-source voltage: 100V Drain current: 334A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Gate charge: 670nC Technology: GigaMOS™; HiPerFET™; Trench™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1kA Mounting: SMD Case: SMPD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MMIX1F420N10T | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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MMIX1F420N10T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W Reverse recovery time: 140ns Drain-source voltage: 100V Drain current: 334A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 680W Polarisation: unipolar Gate charge: 670nC Technology: GigaMOS™; HiPerFET™; Trench™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1kA Mounting: SMD Case: SMPD |
Produkt ist nicht verfügbar |