auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 81.65 EUR |
| 2+ | 58.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMIX1F44N100Q3 IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote MMIX1F44N100Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MMIX1F44N100Q3 | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 30A 24SMPDPackaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
MMIX1F44N100Q3 | Hersteller : IXYS |
MOSFETs HiperFET Pwr MOSFET Q3-Class |
Produkt ist nicht verfügbar |