MMIX1G120N120A3V1 IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 220A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
Description: IGBT PT 1200V 220A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
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Technische Details MMIX1G120N120A3V1 IXYS
Description: IGBT PT 1200V 220A 24-SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 700 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: 24-SMPD, IGBT Type: PT, Td (on/off) @ 25°C: 40ns/490ns, Switching Energy: 10mJ (on), 33mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 420 nC, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 700 A, Power - Max: 400 W.
Weitere Produktangebote MMIX1G120N120A3V1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMIX1G120N120A3V1 | Hersteller : IXYS |
 IGBT Modules SMPD IGBTs Power Device |
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| MMIX1G120N120A3V1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
Produkt ist nicht verfügbar |