MMIX1G120N120A3V1 IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Power dissipation: 400W
Case: SMPD
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Collector current: 105A
Pulsed collector current: 700A
Turn-on time: 105ns
Turn-off time: 1365ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details MMIX1G120N120A3V1 IXYS
Description: IGBT 1200V 220A 400W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 700 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, Supplier Device Package: 24-SMPD, IGBT Type: PT, Td (on/off) @ 25°C: 40ns/490ns, Switching Energy: 10mJ (on), 33mJ (off), Test Condition: 960V, 100A, 1Ohm, 15V, Gate Charge: 420 nC, Part Status: Active, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 700 A, Power - Max: 400 W.
Weitere Produktangebote MMIX1G120N120A3V1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MMIX1G120N120A3V1 | Hersteller : IXYS |
Description: IGBT 1200V 220A 400W SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 700 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 40ns/490ns Switching Energy: 10mJ (on), 33mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 700 A Power - Max: 400 W |
Produkt ist nicht verfügbar |
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MMIX1G120N120A3V1 | Hersteller : IXYS |
IGBT Modules SMPD IGBTs Power Device |
Produkt ist nicht verfügbar |
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| MMIX1G120N120A3V1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Power dissipation: 400W Case: SMPD Mounting: SMD Gate charge: 420nC Kind of package: tube Collector current: 105A Pulsed collector current: 700A Turn-on time: 105ns Turn-off time: 1365ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |