MMIX1T600N04T2 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 36.95 EUR |
| 3+ | 36.94 EUR |
| 20+ | 35.74 EUR |
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Technische Details MMIX1T600N04T2 IXYS
Description: MOSFET N-CH 40V 600A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Weitere Produktangebote MMIX1T600N04T2 nach Preis ab 35.74 EUR bis 64.70 EUR
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MMIX1T600N04T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W Case: SMPD Reverse recovery time: 100ns Drain-source voltage: 40V Drain current: 600A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Gate charge: 590nC Technology: GigaMOS™; TrenchT2™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 2kA Mounting: SMD |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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MMIX1T600N04T2 | Hersteller : IXYS |
MOSFETs 40V 600A |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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MMIX1T600N04T2 | Hersteller : IXYS |
Description: MOSFET N-CH 40V 600A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 24-SMPD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
Produkt ist nicht verfügbar |