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MMIX1T600N04T2
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  • MMIX1T600N04T2

MMIX1T600N04T2 IXYS


littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+36.95 EUR
3+36.94 EUR
20+35.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MMIX1T600N04T2 IXYS

Description: MOSFET N-CH 40V 600A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 24-SMPD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.

Weitere Produktangebote MMIX1T600N04T2 nach Preis ab 35.74 EUR bis 64.70 EUR

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MMIX1T600N04T2
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MMIX1T600N04T2 Hersteller : IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Reverse recovery time: 100ns
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Mounting: SMD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.95 EUR
3+36.94 EUR
20+35.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1T600N04T2 MMIX1T600N04T2 Hersteller : IXYS media-3322311.pdf MOSFETs 40V 600A
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+64.70 EUR
10+55.18 EUR
20+42.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MMIX1T600N04T2 MMIX1T600N04T2 Hersteller : IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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