Technische Details MMIX1X100N60B3H1 Littelfuse
Description: IGBT 600V 145A 400W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 30ns/120ns, Switching Energy: 1.9mJ (on), 2mJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 143 nC, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 400 W.
Weitere Produktangebote MMIX1X100N60B3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MMIX1X100N60B3H1 | Hersteller : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 68A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 143nC Kind of package: tube Turn-on time: 92s Turn-off time: 350ns Anzahl je Verpackung: 1 Stücke |
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MMIX1X100N60B3H1 | Hersteller : IXYS |
Description: IGBT 600V 145A 400W SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: 24-SMPD Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 440 A Power - Max: 400 W |
Produkt ist nicht verfügbar |
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| MMIX1X100N60B3H1 | Hersteller : IXYS |
IGBT Transistors IGBT SMPD PKG-STANDARD |
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| MMIX1X100N60B3H1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 68A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 143nC Kind of package: tube Turn-on time: 92s Turn-off time: 350ns |
Produkt ist nicht verfügbar |