MMIX1X200N60B3 IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 625W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 315nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 395ns
Anzahl je Verpackung: 1 Stücke
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Technische Details MMIX1X200N60B3 IXYS
Description: IGBT 600V 223A 625W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: 24-SMPD, IGBT Type: PT, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 223 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 625 W.
Weitere Produktangebote MMIX1X200N60B3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MMIX1X200N60B3 | Hersteller : IXYS |
Description: IGBT 600V 223A 625W SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 2.9mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 223 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 625 W |
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MMIX1X200N60B3 | Hersteller : IXYS |
IGBTs SMPD IGBTs Power Device |
Produkt ist nicht verfügbar |
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| MMIX1X200N60B3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 625W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 315nC Kind of package: tube Turn-on time: 140ns Turn-off time: 395ns |
Produkt ist nicht verfügbar |