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MMIX1X200N60B3 IXYS


littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Hersteller: IXYS
MMIX1X200N60B3 SMD IGBT transistors
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Technische Details MMIX1X200N60B3 IXYS

Description: IGBT 600V 223A 625W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: 24-SMPD, IGBT Type: PT, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 223 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 625 W.

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MMIX1X200N60B3 Hersteller : IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x200n60b3_datasheet.pdf.pdf Description: IGBT 600V 223A 625W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
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MMIX1X200N60B3 MMIX1X200N60B3 Hersteller : IXYS ixys_s_a0008597253_1-2273138.pdf IGBT Transistors SMPD IGBTs Power Device
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