MMIX1X200N60B3H1 IXYS
Hersteller: IXYSDescription: IGBT 600V 175A 520W SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 86.22 EUR |
| 10+ | 80.44 EUR |
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Technische Details MMIX1X200N60B3H1 IXYS
Description: IGBT 600V 175A 520W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 175 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 520 W.
Weitere Produktangebote MMIX1X200N60B3H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MMIX1X200N60B3H1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 520W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 315nC Kind of package: tube Turn-on time: 140ns Turn-off time: 395ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MMIX1X200N60B3H1 | Hersteller : IXYS |
IGBTs SMPD IGBTs Power Device |
Produkt ist nicht verfügbar |
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| MMIX1X200N60B3H1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 520W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 315nC Kind of package: tube Turn-on time: 140ns Turn-off time: 395ns |
Produkt ist nicht verfügbar |