auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 81.05 EUR |
| 10+ | 75.59 EUR |
| 20+ | 72.42 EUR |
| 100+ | 65.65 EUR |
| 500+ | 61.92 EUR |
| 1000+ | 59.79 EUR |
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Technische Details MMIX1X200N60B3H1 IXYS
Description: IGBT 600V 175A 520W SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 175 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 520 W.
Weitere Produktangebote MMIX1X200N60B3H1 nach Preis ab 80.44 EUR bis 86.22 EUR
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MMIX1X200N60B3H1 | Hersteller : IXYS |
 Description: IGBT 600V 175A 520W SMPDPackaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: 24-SMPD Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 2.9mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 175 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 520 W |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMIX1X200N60B3H1 | Hersteller : IXYS |
MMIX1X200N60B3H1 SMD IGBT transistors |
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