MMIX2F60N50P3 IXYS
Hersteller: IXYSCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Mounting: SMD
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET x2
Power dissipation: 320W
Polarisation: unipolar
Gate charge: 96nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Case: SMPD
Reverse recovery time: 250ns
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 42.54 EUR |
| 20+ | 41.84 EUR |
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Technische Details MMIX2F60N50P3 IXYS
Description: MOSFET 2N-CH 500V 30A 24SMPD, Packaging: Tube, Package / Case: 24-SMD Module, 9 Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V, Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: 24-SMPD, Part Status: Active.
Weitere Produktangebote MMIX2F60N50P3 nach Preis ab 41.84 EUR bis 42.54 EUR
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MMIX2F60N50P3 | Hersteller : IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Mounting: SMD Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET x2 Power dissipation: 320W Polarisation: unipolar Gate charge: 96nC Technology: HiPerFET™; Polar3™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 150A Case: SMPD Reverse recovery time: 250ns Drain-source voltage: 500V |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMIX2F60N50P3 | Hersteller : IXYS |
Description: MOSFET 2N-CH 500V 30A 24SMPD Packaging: Tube Package / Case: 24-SMD Module, 9 Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: 24-SMPD Part Status: Active |
Produkt ist nicht verfügbar |
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| MMIX2F60N50P3 | Hersteller : IXYS |
Discrete Semiconductor Modules MSFT SMPD PKG-HIPERFET MSF |
Produkt ist nicht verfügbar |