MMUN2130LT1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
| Anzahl | Preis |
|---|---|
| 3000+ | 0.053 EUR |
| 6000+ | 0.05 EUR |
| 9000+ | 0.043 EUR |
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Technische Details MMUN2130LT1G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote MMUN2130LT1G nach Preis ab 0.04 EUR bis 0.3 EUR
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MMUN2130LT1G | onsemi |
Digital Transistors 100mA 50V BRT PNP |
auf Bestellung 7807 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2130LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 29673 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMUN2130LT1G | ON Semiconductor |
|
auf Bestellung 2670 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMUN2130LT1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT PNP
Digital Transistors 100mA 50V BRT PNP
auf Bestellung 7807 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 0.27 EUR |
| 19+ | 0.15 EUR |
| 100+ | 0.092 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.051 EUR |
| 3000+ | 0.046 EUR |
| 6000+ | 0.04 EUR |
| MMUN2130LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 29673 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 0.3 EUR |
| 82+ | 0.22 EUR |
| 151+ | 0.12 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.064 EUR |
| MMUN2130LT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 2670 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH