MMUN2130LT1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.078 EUR |
| 6000+ | 0.074 EUR |
| 9000+ | 0.063 EUR |
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Technische Details MMUN2130LT1G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote MMUN2130LT1G nach Preis ab 0.047 EUR bis 0.44 EUR
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MMUN2130LT1G | Hersteller : onsemi |
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP |
auf Bestellung 8110 Stücke: Lieferzeit 14-28 Tag (e) |
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MMUN2130LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 29673 Stücke: Lieferzeit 21-28 Tag (e) |
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| MMUN2130LT1G | Hersteller : ON Semiconductor |
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auf Bestellung 2670 Stücke: Lieferzeit 21-28 Tag (e) |
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| MMUN2130LT1G | Hersteller : ONSEMI |
Description: ONSEMI - MMUN2130LT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 289274 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2130LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMUN2130LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMUN2130LT1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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MMUN2130LT1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |