MMUN2216LT1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 3237+ | 0.045 EUR |
| 6000+ | 0.038 EUR |
| 9000+ | 0.034 EUR |
| 15000+ | 0.031 EUR |
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Produktbewertung abgeben
Technische Details MMUN2216LT1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistors Included: R1 Only, Resistor - Base (R1): 4.7 kOhms, Power - Max: 400 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMUN2216LT1G nach Preis ab 0.032 EUR bis 2.75 EUR
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MMUN2216LT1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2216LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2216LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2216LT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
auf Bestellung 887 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2216LT1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 16206 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2216LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 Only Resistor - Base (R1): 4.7 kOhms Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 15722 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMUN2216LT1G | Hersteller : ON-Semiconductor |
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 MMUN2216LT1G TMMUN2216 Anzahl je Verpackung: 90 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| MMUN2216LT1G | Hersteller : ON-Semiconductor |
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 MMUN2216LT1G TMMUN2216 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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