Technische Details MMUN2217LT1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistors Included: R1 and R2, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active.
Weitere Produktangebote MMUN2217LT1G nach Preis ab 0.02 EUR bis 0.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MMUN2217LT1G | ON Semiconductor |
 Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R |
auf Bestellung 5337000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2217LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 and R2 Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2217LT1G | onsemi |
Digital Transistors SS SOT23 BR XSTR NPN 50V |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2217LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 3287 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMUN2217LT1G |
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Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R
auf Bestellung 5337000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3611+ | 0.048 EUR |
| 6000+ | 0.04 EUR |
| 9000+ | 0.037 EUR |
| 15000+ | 0.035 EUR |
| 21000+ | 0.031 EUR |
| 30000+ | 0.029 EUR |
| 75000+ | 0.024 EUR |
| 150000+ | 0.023 EUR |
| 300000+ | 0.02 EUR |
| MMUN2217LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.051 EUR |
| MMUN2217LT1G |
|
Hersteller: onsemi
Digital Transistors SS SOT23 BR XSTR NPN 50V
Digital Transistors SS SOT23 BR XSTR NPN 50V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 0.27 EUR |
| 21+ | 0.17 EUR |
| 100+ | 0.099 EUR |
| 500+ | 0.071 EUR |
| 1000+ | 0.061 EUR |
| 3000+ | 0.05 EUR |
| MMUN2217LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 0.27 EUR |
| 130+ | 0.17 EUR |
| 212+ | 0.099 EUR |
| 500+ | 0.071 EUR |
| 1000+ | 0.063 EUR |