MMUN2217LT1G ON Semiconductor
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48000+ | 0.027 EUR |
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Technische Details MMUN2217LT1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote MMUN2217LT1G nach Preis ab 0.027 EUR bis 0.23 EUR
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MMUN2217LT1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2217LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2217LT1G | Hersteller : onsemi |
Digital Transistors NPN Bipolar Digital Transistor (BRT) |
auf Bestellung 702 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2217LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 73410 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2217LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMUN2217LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMUN2217LT1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |