MMUN2236LT1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 20000+ | 0.027 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMUN2236LT1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 100 kOhms, Resistor - Base (R1): 100 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMUN2236LT1G nach Preis ab 0.046 EUR bis 0.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MMUN2236LT1G | onsemi |
 Digital Transistors NPN DIGITAL TRANSISTOR (BRT) |
auf Bestellung 13396 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2236LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MMUN2236LT1G |
|
Hersteller: onsemi
Digital Transistors NPN DIGITAL TRANSISTOR (BRT)
Digital Transistors NPN DIGITAL TRANSISTOR (BRT)
auf Bestellung 13396 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 0.24 EUR |
| 20+ | 0.15 EUR |
| 100+ | 0.092 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.058 EUR |
| 3000+ | 0.046 EUR |
| MMUN2236LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 121+ | 0.15 EUR |
| 196+ | 0.09 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.057 EUR |