MOT100N03MC

MOT100N03MC Guangdong Inmark Electronics Co., Ltd.


trenchsgtmOS_763.html Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
25+0.71 EUR
100+0.43 EUR
500+0.3 EUR
1000+0.25 EUR
4200+0.22 EUR
Mindestbestellmenge: 15
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Technische Details MOT100N03MC Guangdong Inmark Electronics Co., Ltd.

Description: MOSFET N-CH 30V 100A 3.4m To-25, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V.