MOT30N06D Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 60V 30A 20m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 938 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 2500+ | 0.2 EUR |
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Technische Details MOT30N06D Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 30A 20m To-252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A, Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 938 pF @ 20 V.
Weitere Produktangebote MOT30N06D nach Preis ab 0.33 EUR bis 0.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis | ||||
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| MOT30N06D | Hersteller : MOT- |
Transistor N-Channel MOSFET; 60V; 20V; 40mOhm; 30A; 50W; -55°C ~ 150°C; Equivalent: IRLR2705; IRLR2705TR; IRLR2705TRL; IRLR2705-GURT; IRLR2705; YFW50N06AD; MOT30N06D; DH300N08D; IRLR2705TR MOT TIRLR2705 MOT Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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