MOT30N10BD Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 30A 32m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 54W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 18+ | 1.03 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.31 EUR |
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Technische Details MOT30N10BD Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 30A 32m To-252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A, Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Power Dissipation (Max): 54W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V.