MOT50N06C Guangdong Inmark Electronics Co., Ltd.
Hersteller: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.29 EUR |
| 4200+ | 0.25 EUR |
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Technische Details MOT50N06C Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Power Dissipation (Max): 75W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V.