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MPSA13 TRE TIN/LEAD

MPSA13 TRE TIN/LEAD Central Semiconductor


Hersteller: Central Semiconductor
Darlington Transistors 500mA,30V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington
auf Bestellung 8270 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.78 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.35 EUR
2000+0.32 EUR
4000+0.30 EUR
Mindestbestellmenge: 3
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Technische Details MPSA13 TRE TIN/LEAD Central Semiconductor

Description: 500MA 30V TH TRANSISTOR-SMALL SI, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Frequency - Transition: 125MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 625 mW.

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MPSA13 TRE TIN/LEAD Hersteller : Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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Im Einkaufswagen  Stück im Wert von  UAH