
MPSA13 TRE TIN/LEAD Central Semiconductor
Hersteller: Central Semiconductor
Darlington Transistors 500mA,30V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington
Darlington Transistors 500mA,30V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington
auf Bestellung 8270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.04 EUR |
10+ | 0.78 EUR |
100+ | 0.58 EUR |
500+ | 0.45 EUR |
1000+ | 0.35 EUR |
2000+ | 0.32 EUR |
4000+ | 0.30 EUR |
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Technische Details MPSA13 TRE TIN/LEAD Central Semiconductor
Description: 500MA 30V TH TRANSISTOR-SMALL SI, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Frequency - Transition: 125MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 625 mW.
Weitere Produktangebote MPSA13 TRE TIN/LEAD
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MPSA13 TRE TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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