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MPSA18 TIN/LEAD

MPSA18 TIN/LEAD Central Semiconductor


get_document-1518522.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Low Noise 45Vcbo 45Vceo 6.5Vebo 3pF
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Technische Details MPSA18 TIN/LEAD Central Semiconductor

Description: 45V 200MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 625 mW.

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MPSA18 TIN/LEAD MPSA18 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 45V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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