MPSA45 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 350V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: 350V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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Technische Details MPSA45 TIN/LEAD Central Semiconductor Corp
Description: 350V 300MA 625MW TH TRANSISTOR-S, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V, Frequency - Transition: 20MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 625 mW.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MPSA45 TIN/LEAD | Hersteller : Central Semiconductor | Bipolar Transistors - BJT NPN 400Vcbo 350Vceo 6.0Vebo 50mA 6.0pF |
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