Technische Details MPSH10G ON Semiconductor
Description: RF TRANS NPN 25V 650MHZ TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 350mW, Voltage - Collector Emitter Breakdown (Max): 25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V, Frequency - Transition: 650MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete.
Weitere Produktangebote MPSH10G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| MPSH10G | Hersteller : ON Semiconductor |
 Trans RF BJT NPN 25V 350000mW 3-Pin TO-92 Box |
Produkt ist nicht verfügbar |
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MPSH10G | Hersteller : onsemi |
Description: RF TRANS NPN 25V 650MHZ TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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MPSH10G | Hersteller : onsemi |
Bipolar Transistors - BJT 25V VHF/UHF NPN |
Produkt ist nicht verfügbar |