MRH25N12U3 Microchip Technology
Hersteller: Microchip Technology
Description: RH MOSFET _ U3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Part Status: Active
Supplier Device Package: U3 (SMD-0.5)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Drain to Source Voltage (Vdss): 250 V
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Technische Details MRH25N12U3 Microchip Technology
Description: RH MOSFET _ U3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Part Status: Active, Supplier Device Package: U3 (SMD-0.5), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V, Drain to Source Voltage (Vdss): 250 V.