MSC015SMA070B MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W
Drain-source voltage: 700V
Drain current: 99A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Technology: SiC
Kind of channel: enhancement
Pulsed drain current: 350A
Mounting: THT
Case: TO247-3
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 22.11 EUR |
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Technische Details MSC015SMA070B MICROCHIP TECHNOLOGY
Description: SICFET N-CH 700V 131A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V.
Weitere Produktangebote MSC015SMA070B nach Preis ab 22.11 EUR bis 63.34 EUR
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MSC015SMA070B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W Drain-source voltage: 700V Drain current: 99A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Technology: SiC Kind of channel: enhancement Pulsed drain current: 350A Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC015SMA070B | Hersteller : Microchip Technology |
Description: SICFET N-CH 700V 131A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V |
auf Bestellung 160 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC015SMA070B | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 700V 140A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
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MSC015SMA070B | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 700V 140A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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MSC015SMA070B | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 700V 140A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |