MSC015SMA070B Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.21 EUR |
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Technische Details MSC015SMA070B Microchip Technology
Description: SICFET N-CH 700V 131A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V.
Weitere Produktangebote MSC015SMA070B nach Preis ab 30.27 EUR bis 79.73 EUR
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MSC015SMA070B | Microchip Technology |
 Trans MOSFET N-CH SiC 700V 140A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC015SMA070B | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W; SMA Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 400W Kind of package: tube Manufacturer standard package: 30pcs. Pulsed drain current: 350A Gate charge: 215nC Polarisation: unipolar Drain current: 99A Kind of channel: enhancement Drain-source voltage: 700V Type of transistor: N-MOSFET Family: SMA On-state resistance: 19mΩ |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| MSC015SMA070B | Microchip Technology |
Description: SICFET N-CH 700V 131A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSC015SMA070B |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH SiC 700V 140A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 700V 140A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 79.73 EUR |
| 5+ | 73.71 EUR |
| 10+ | 67.39 EUR |
| 20+ | 65.93 EUR |
| 50+ | 61.99 EUR |
| MSC015SMA070B |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W; SMA
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 400W
Kind of package: tube
Manufacturer standard package: 30pcs.
Pulsed drain current: 350A
Gate charge: 215nC
Polarisation: unipolar
Drain current: 99A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 19mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 99A; Idm: 350A; 400W; SMA
Technology: SiC
Mounting: THT
Case: TO247-3
Power dissipation: 400W
Kind of package: tube
Manufacturer standard package: 30pcs.
Pulsed drain current: 350A
Gate charge: 215nC
Polarisation: unipolar
Drain current: 99A
Kind of channel: enhancement
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 19mΩ
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| MSC015SMA070B |
Hersteller: Microchip Technology
Description: SICFET N-CH 700V 131A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
Description: SICFET N-CH 700V 131A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.82 EUR |
| 25+ | 30.27 EUR |