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MSC020SDA120S

MSC020SDA120S Microchip Technology

Microsemi_MSC020SDA120S_SiC_Schottky_Diode_Datasheet_A.PDF
Hersteller: Microchip Technology
Description: DIODE SIL CARB 1200V 49A D3PAK
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 49A
Capacitance @ Vr, F: 1130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Bulk
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Technische Details MSC020SDA120S Microchip Technology

Description: DIODE SIL CARB 1200V 49A D3PAK, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D3Pak, Current - Average Rectified (Io): 49A, Capacitance @ Vr, F: 1130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Packaging: Bulk.