MSC025SMA120J Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 102.98 EUR |
| 10+ | 94.99 EUR |
| 100+ | 82.65 EUR |
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Technische Details MSC025SMA120J Microchip Technology
Description: SICFET N-CH 1.2KV 77A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V.
Weitere Produktangebote MSC025SMA120J nach Preis ab 79.24 EUR bis 105.14 EUR
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MSC025SMA120J | Microchip Technology |
 Description: SICFET N-CH 1.2KV 77A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V |
auf Bestellung 1427 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC025SMA120J |
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Hersteller: Microchip Technology
Description: SICFET N-CH 1.2KV 77A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Description: SICFET N-CH 1.2KV 77A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
auf Bestellung 1427 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 105.14 EUR |
| 25+ | 96.96 EUR |
| 100+ | 79.24 EUR |