MSC025SMA120J Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.68 EUR |
| 10+ | 81.79 EUR |
| 30+ | 80.66 EUR |
| 100+ | 80.19 EUR |
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Technische Details MSC025SMA120J Microchip Technology
Description: SICFET N-CH 1.2KV 77A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227 (ISOTOP®), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote MSC025SMA120J nach Preis ab 76.71 EUR bis 101.79 EUR
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MSC025SMA120J | Microchip Technology |
 Description: SICFET N-CH 1.2KV 77A SOT227Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: SOT-227 (ISOTOP®) Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
auf Bestellung 1550 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC025SMA120J |
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Hersteller: Microchip Technology
Description: SICFET N-CH 1.2KV 77A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: SOT-227 (ISOTOP®)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: SICFET N-CH 1.2KV 77A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: SOT-227 (ISOTOP®)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 101.79 EUR |
| 25+ | 93.87 EUR |
| 100+ | 76.71 EUR |