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MSC035SMA070B4

MSC035SMA070B4 Microchip Technology


MSC035SMA070B-SiC-MOSFET-Datasheet.pdf
Hersteller: Microchip Technology
SiC MOSFETs FG, SIC MOSFET, TO-247 4-LEAD
auf Bestellung 982 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.54 EUR
10+15.17 EUR
30+13.89 EUR
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Technische Details MSC035SMA070B4 Microchip Technology

Description: TRANS SJT N-CH 700V 77A TO247-4, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ), Power Dissipation (Max): 283W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.

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MSC035SMA070B4 MSC035SMA070B4 Hersteller : MICROCHIP TECHNOLOGY 1244749-msc035sma070b4-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W; SMA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 54A
Pulsed drain current: 192A
Power dissipation: 283W
Case: TO247-4
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Family: SMA
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+23.34 EUR
Mindestbestellmenge: 4
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MSC035SMA070B4 MSC035SMA070B4 Hersteller : Microchip Technology 1244749-msc035sma070b4-datasheet Description: TRANS SJT N-CH 700V 77A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Power Dissipation (Max): 283W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.89 EUR
25+22.96 EUR
100+19.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH