MSC040SMA120J Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 65.32 EUR |
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Technische Details MSC040SMA120J Microchip Technology
Description: SICFET N-CH 1200V 53A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120J nach Preis ab 56.23 EUR bis 90.5 EUR
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MSC040SMA120J | Microchip Technology |
 Description: SICFET N-CH 1200V 53A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
auf Bestellung 573 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC040SMA120J | Microchip Technology |
Trans MOSFET N-CH SiC 1.2KV 53A 4-Pin SOT-227 Tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC040SMA120J | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 37A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Pulsed drain current: 105A Power dissipation: 208W Technology: SiC Mechanical mounting: screw Kind of package: tube Manufacturer standard package: 10pcs. |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC040SMA120J |
|
Hersteller: Microchip Technology
Description: SICFET N-CH 1200V 53A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1200V 53A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 74.6 EUR |
| 25+ | 68.78 EUR |
| 100+ | 56.23 EUR |
| MSC040SMA120J |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH SiC 1.2KV 53A 4-Pin SOT-227 Tube
Trans MOSFET N-CH SiC 1.2KV 53A 4-Pin SOT-227 Tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 90.5 EUR |
| MSC040SMA120J |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Pulsed drain current: 105A
Power dissipation: 208W
Technology: SiC
Mechanical mounting: screw
Kind of package: tube
Manufacturer standard package: 10pcs.
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 37A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Pulsed drain current: 105A
Power dissipation: 208W
Technology: SiC
Mechanical mounting: screw
Kind of package: tube
Manufacturer standard package: 10pcs.
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)