MSC040SMA120S/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET SIC 1200 V 40 MOHM TO-268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.04 EUR |
| 25+ | 40.61 EUR |
| 100+ | 35.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MSC040SMA120S/TR Microchip Technology
Description: MOSFET SIC 1200 V 40 MOHM TO-268, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 303W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 2mA, Supplier Device Package: TO-268, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120S/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSC040SMA120S/TR | Hersteller : MICROCHIP TECHNOLOGY |
MSC040SMA120S/TR SMD N channel transistors |
Produkt ist nicht verfügbar |
||
|
|
MSC040SMA120S/TR | Hersteller : Microchip Technology |
Description: MOSFET SIC 1200 V 40 MOHM TO-268 Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 303W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 2mA Supplier Device Package: TO-268 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
Produkt ist nicht verfügbar |
|
 |
MSC040SMA120S/TR | Hersteller : Microchip Technology |
SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-268, TAPE & REEL |
Produkt ist nicht verfügbar |