MSC050SDA120BCT Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 65.28 EUR |
| 30+ | 60.19 EUR |
| 120+ | 52.38 EUR |
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Technische Details MSC050SDA120BCT Microchip Technology
Description: DIODE SIL CARB 1200V 109A TO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 246pF @ 400V, 1MHz, Current - Average Rectified (Io): 109A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote MSC050SDA120BCT nach Preis ab 47.24 EUR bis 58.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| MSC050SDA120BCT | Microchip Technology |
Description: DIODE SIL CARB 1200V 109A TO2473 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 246pF @ 400V, 1MHz Current - Average Rectified (Io): 109A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSC050SDA120BCT |
Hersteller: Microchip Technology
Description: DIODE SIL CARB 1200V 109A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 246pF @ 400V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 109A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 246pF @ 400V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 58.87 EUR |
| 25+ | 54.28 EUR |
| 100+ | 47.24 EUR |