MSC060SMA070SA Microchip Technology
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Technische Details MSC060SMA070SA Microchip Technology
Description: MOSFET SIC 700 V 60 MOHM TO-263-, Packaging: Bulk, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-268, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V.
Weitere Produktangebote MSC060SMA070SA
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSC060SMA070SA | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 26A Pulsed drain current: 93A Power dissipation: 130W Case: TO263-7 On-state resistance: 75mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
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| MSC060SMA070SA | Hersteller : Microchip Technology |
 Trans MOSFET N-CH SiC 700V 48A 8-Pin(7+Tab) TO-263 |
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MSC060SMA070SA | Hersteller : Microchip Technology |
Description: MOSFET SIC 700 V 60 MOHM TO-263- Packaging: Bulk Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-268 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V |
Produkt ist nicht verfügbar |
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MSC060SMA070SA | Hersteller : Microchip Technology |
SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-263-7 |
Produkt ist nicht verfügbar |
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| MSC060SMA070SA | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 26A Pulsed drain current: 93A Power dissipation: 130W Case: TO263-7 On-state resistance: 75mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |