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MSC060SMA070SA Microchip Technology


Hersteller: Microchip Technology
MOSFET SIC 700 V 60 mOhm TO-263-7
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Technische Details MSC060SMA070SA Microchip Technology

Description: MOSFET SIC 700 V 60 MOHM TO-263-, Packaging: Bulk, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-268, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V.

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MSC060SMA070SA Hersteller : MICROCHIP TECHNOLOGY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 26A
Pulsed drain current: 93A
Power dissipation: 130W
Case: TO263-7
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
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MSC060SMA070SA Hersteller : Microchip Technology 00004501a_msc060sma070sa_sic_mosfet_datasheet.pdf Trans MOSFET N-CH SiC 700V 48A 8-Pin(7+Tab) TO-263
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MSC060SMA070SA MSC060SMA070SA Hersteller : Microchip Technology Description: MOSFET SIC 700 V 60 MOHM TO-263-
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
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MSC060SMA070SA MSC060SMA070SA Hersteller : Microchip Technology 00004501A_MSC060SMA070SA_SiC_MOSFET_Datasheet-3080026.pdf SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-263-7
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MSC060SMA070SA Hersteller : MICROCHIP TECHNOLOGY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 26A; Idm: 93A; 130W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 26A
Pulsed drain current: 93A
Power dissipation: 130W
Case: TO263-7
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH