MSC080SMA120B4 Microchip Technology
| Anzahl | Preis |
|---|---|
| 1+ | 15.45 EUR |
| 30+ | 14.24 EUR |
| 120+ | 12.39 EUR |
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Technische Details MSC080SMA120B4 Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V.
Weitere Produktangebote MSC080SMA120B4 nach Preis ab 14.27 EUR bis 15.47 EUR
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MSC080SMA120B4 | Hersteller : Microchip Technology |
 Description: SICFET N-CH 1200V 37A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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